Home
Shop
Shipping across Egypt
WhatsApp support+20 121 198 1188Hotline+20 248 813 824
عربي

IRF530 N-Channel Power MOSFET 100V 14A TO-220

The IRF530 is commonly used as a high-voltage, medium-current N-channel switching MOSFET for power switching, motor drives, and DC–DC converters.

20.00 EGP

In stockSKU 2986505197415
Buy Now
Shipping across EgyptDelivered to your door
Cash on deliveryPay when your order arrives
Not sure it fits your project?Ask us on WhatsApp - we reply fast
IRF530 N-Channel Power MOSFET 100V 14A TO-220

The IRF530 is an N-channel enhancement-mode power MOSFET in a TO-220 package designed for switching and linear power applications. It features a 100 V drain-to-source rating and is optimized to handle moderate currents while offering rugged avalanche and thermal performance. Typical uses include switching regulators, motor controllers, power supplies, relay drivers, lamp/LED drivers and general power switching in industrial and consumer electronics. The TO-220 package allows easy heatsinking for higher dissipation and straightforward PCB mounting.

IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A.

The user can operate this MOSFET by the output of ICs and microcontrollers because it is designed to operate with a low gate driving current. This MOSFET can operate in the temperature range of -55˚C to +175 ˚C. It is more popular in industries due to its low cost and ruggedized design. It also features low-on-state resistance and fast switching.

Features:
  • N-Channel Enhancement Mode MOSFET.
  • HEXFET Technology.
  • Fast Switching Speed.
  • Ruggedized Device Design.
  • Low On-Resistance.
  • Avalanche Energy Rated.
  • Integral Body Diode.
  • Easy to Drive.
  • TO-220 Package for Easy Mounting.
Specifications:
Parameter Value
Device: IRF530 (N-Channel Power MOSFET)
Drain-Source Voltage (VDS): 100V (max)
Continuous Drain Current (ID): 14A
Drain-Source On-Resistance (RDS(on)): ≈ 0.16 Ω @ VGS = 10 V
Gate Threshold Voltage (VGS(th)): 2–4 V
Maximum Gate-Source Voltage (VGS): ±20 V (max)
Power Dissipation (PD): ~88W at TC = 25°C
Operating Temperature: +175°C
Package: TO-220 (through-hole)
Mounting: Through-hole, heat sinkable tab
Pinout:
Pin No Name Function
1 Gate (G) Gate drive input
2 Drain (D) Drain (also connected to metal tab)
3 Source (S) Source (return)
Applications:
  • DC motor drivers.
  • Switching power supplies.
  • DC-DC converters.
  • Battery management systems.
  • Inverter circuits.
  • LED drivers.
  • Relay drivers.
  • Load switching.
Packages:
  • 1x IRF530 N-Channel Power MOSFET 100V 14A TO-220.
Documents:
IRF530 Datasheet
Back to Top
Product has been added to your cart