Description
The devices are manufactured in planar technology with a “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
- The low collector-emitter saturation voltage
- Complementary NPN – PNP transistors
Applications
- General purpose linear and switching
Technical Specifications
Physical | |
Case/Package | TO-220 |
Contact Plating | Tin |
Mount | Through Hole |
Number of Pins | 3 |
Technical | |
Collector Base Voltage (VCBO) | 100 V |
Collector Emitter Breakdown Voltage | 100 V |
Collector Emitter Saturation Voltage | 2 V |
Collector Emitter Voltage (VCEO) | 100 V |
Current Rating | 5 A |
Element Configuration | Single |
Emitter Base Voltage (VEBO) | 5 V |
hFE Min | 1000 |
Max Collector Current | 5 A |
Max Junction Temperature (Tj) | 150 °C |
Max Operating Temperature | 150 °C |
Max Power Dissipation | 65 W |
Min Operating Temperature | -65 °C |
Number of Elements | 1 |
Polarity | NPN |
Power Dissipation | 2 W |
Voltage Rating (DC) | 100 V |
Tip122 Datasheet