C5198 Power BJT Transistor NPN 140V 10A TO-3P
C5198 Power BJT Transistor NPN 140V 10A TO-3P is a high-performance silicon NPN bipolar junction transistor designed for demanding power amplification and switching applications. With a maximum collector-emitter voltage of 140V, continuous collector current of 10A, and 100W power dissipation, it delivers reliable performance in audio amplifier output stages and industrial electronic circuits. Its rugged TO-3P package provides excellent heat dissipation, making it suitable for high-power designs requiring durability, stability, and efficient thermal management.
Features
- High collector-emitter voltage rating of 140V for demanding applications.
- Supports continuous collector current up to 10A.
- High power dissipation of 100W for reliable operation.
- Low saturation voltage improves power efficiency.
- Designed for high-fidelity audio amplifier output stages.
- Excellent current gain and linearity.
- Rugged TO-3P package provides efficient heat dissipation.
- Suitable for both amplification and switching circuits.
- High reliability and long service life.
- Compatible with complementary transistor 2SA1941.
specification
| Parameter | Details |
| Part Number | C5198 |
| Transistor Type | BJT Transistor |
| Material | Silicon |
| Polarity | NPN |
| Package | TO-3P |
| Collector-Emitter Voltage (VCEO) | 140V |
| Collector-Base Voltage (VCBO) | 140V |
| Emitter-Base Voltage (VEBO) | 5V |
| Collector Current (IC) | 10A |
| Power Dissipation (PC) | 100W |
| DC Current Gain (hFE) | 35 to 160 |
| Transition Frequency (fT) | 30MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2V |
| Collector Output Capacitance | 170pF |
| Base-Emitter Voltage (VBE) | 1.5V |
| Junction Temperature | 150°C |
| Storage Temperature | -55°C to +150°C |



