General Description
The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion.
Features
- VDS (V) = 30V
- ID = 85A (VGS = 10V)
- RDS(ON) < 5.2mW (VGS = 10V) RDS(ON) < 7.0mW (VGS = 4.5V)
Specification
| Absolute Maximum Ratings TA=25°C unless otherwise noted | ||||
| Parameter | Symbol | Maximum | Units | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain
Current B,G |
TC=25°C G |
ID |
85 |
A |
| TC=100°C B | 66 | |||
| Pulsed Drain Current | IDM | 200 | ||
| Avalanche Current C | IAR | 30 | A | |
| Repetitive avalanche energy L=0.1mH C | EAR | 140 | mJ | |
|
Power Dissipation B |
TC=25°C | PD | 100 | W |
| TC=100°C | 50 | |||
|
Power Dissipation A |
TA=25°C | PDSM | 2.5 | W |
| TA=70°C | 1.6 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 175 | °C | |
| Thermal Characteristics | |||||
| Parameter | Symbol | Typ Max | Units | ||
| Maximum Junction-to-Ambient A | t ≤ 10s | RqJA | 14.2 | 20 | °C/W |
| Maximum Junction-to-Ambient A | Steady-State | 40 | 50 | °C/W | |
| Maximum Junction-to-Case C | Steady-State | RqJC | 0.56 | 1.5 | °C/W |
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