2sK538 N-Channel MOSFET Transistor
- Type Designator: 2SK538
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 55 nS
- Drain-Source Capacitance (Cd): 120 pF
- Maximum Drain-Source On-State Resistance (Rds): 3.3 Ohm
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