MTP6N60 N-Channel MOSFET
The MTP6N60 is an N-Channel MOSFET transistor housed in a TO-220 package. It is specifically designed for use in high-efficiency switch-mode power supplies. This component features simple drive requirements and fast switching capabilities, making it a reliable choice for power management applications.
✅Features
Drain Current: ID = 6A (at TC = 25°C)Drain-Source Voltage: VDSS = 600V (Min)Static Drain-Source On-Resistance: RDS(on) = 1.2 Ω (Max)Avalanche Energy Specified
Fast Switching
Simple Drive Requirements
📜📚Specifications
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage (Continuous)
±20
V
ID
Drain Current (Continuous)
6
A
IDM
Drain Current (Single Pulsed)
24
A
PD
Total Dissipation (at Tc = 25°C)
125
W
Tj
Max. Operating Junction Temperature
150
°C
Tstg
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics (TC = 25°C)
Symbol
Parameter
Conditions
Min
Max
Unit
V(BR)DSS
Drain-Source Breakdown Voltage
VGS =0, ID =0.25mA
600
–
V
VGS(th)
Gate Threshold Voltage
VDS =VGS , ID =0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS =10V, ID =3A
–
1.2
Ω
IGSS
Gate-Body Leakage Current
VGS =±20V, VDS =0
–
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS =600V, VGS =0
–
1
μA
VSD
Forward On-Voltage
IS =6A, VGS =0
–
1.8
V
Thermal Characteristics
Symbol
Parameter
Max
Unit
Rth jc
Thermal Resistance, Junction to Case
1
°C/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
°C/W
⚓Pin Configuration
Pin 1: Gate Pin 2: Drain Pin 3: Source
💻Applications
High-efficiency switch-mode power supply.
📖DataSheet
Reviews
There are no reviews yet.