Specifications:
- Type Designator: MTP6N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 125 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Drain Current-Continuous |Id|: 6 A
- Drain Current-Single Plused: 24 A
- Maximum Junction Temperature (Tj): 150 °C
- Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
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