MTP6N60 N-Channel MOSFET Transistor 600V 6A 1.2Ω@3A,10V 125W TO-220
The MTP6N60 is an N-Channel MOSFET transistor housed in a TO-220 package. It is specifically designed for use in high-efficiency switch-mode power supplies. This component features simple drive requirements and fast switching capabilities, making it a reliable choice for power management applications.
✅Features
- Drain Current: ID = 6A (at TC = 25°C)
- Drain-Source Voltage: VDSS = 600V (Min)
- Static Drain-Source On-Resistance: RDS(on) = 1.2 Ω (Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
📜📚Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Symbol |
Parameter |
Value |
Unit |
| VDSS |
Drain-Source Voltage |
600 |
V |
| VGS |
Gate-Source Voltage (Continuous) |
±20 |
V |
| ID |
Drain Current (Continuous) |
6 |
A |
| IDM |
Drain Current (Single Pulsed) |
24 |
A |
| PD |
Total Dissipation (at Tc = 25°C) |
125 |
W |
| Tj |
Max. Operating Junction Temperature |
150 |
°C |
| Tstg |
Storage Temperature |
-55 ~ 150 |
°C |
Electrical Characteristics (TC = 25°C)
| Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| V(BR)DSS |
Drain-Source Breakdown Voltage |
VGS=0, ID=0.25mA |
600 |
– |
V |
| VGS(th) |
Gate Threshold Voltage |
VDS=VGS, ID=0.25mA |
2 |
4 |
V |
| RDS(on) |
Drain-Source On-Resistance |
VGS=10V, ID=3A |
– |
1.2 |
Ω |
| IGSS |
Gate-Body Leakage Current |
VGS=±20V, VDS=0 |
– |
±100 |
nA |
| IDSS |
Zero Gate Voltage Drain Current |
VDS=600V, VGS=0 |
– |
1 |
μA |
| VSD |
Forward On-Voltage |
IS=6A, VGS=0 |
– |
1.8 |
V |
Thermal Characteristics
| Symbol |
Parameter |
Max |
Unit |
| Rth jc |
Thermal Resistance, Junction to Case |
1 |
°C/W |
| Rth j-a |
Thermal Resistance, Junction to Ambient |
62.5 |
°C/W |
⚓Pin Configuration
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
💻Applications
- High-efficiency switch-mode power supply.
📖DataSheet
