FQP40N10 N-Channel Power Mosfet Transistor 100V 40A 150W TO-220

Specifications:

• Type Designator: 40N10
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 150 W
• Maximum Drain-Source Voltage |Vds|: 100 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 40 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 30 nS
• Drain-Source Capacitance (Cd): 2500 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
• Package: TO-220

40N10 Datasheet