MBR745 Schottky Barrier Diode 45V 7.5A Through Hole TO-220-2
The MBR745 is a Schottky barrier rectifier designed for low forward-voltage, high-efficiency rectification in power applications. Housed in through-hole TO-220 (and surface-mount D2PAK) styles, it is engineered to handle continuous average currents while maintaining a low voltage drop across the junction, reducing conduction losses and heat generation in high-speed switching environments.
Built for rugged operation, the device supports elevated junction temperatures and features robust encapsulation that improves mechanical strength and moisture resistance. Its construction and guard-ring design enhance long-term reliability under repetitive switching and surge conditions, making it a reliable choice where frequent switching and transient events occur.
The MBR745 is aimed at power conversion roles where compactness, fast recovery and low loss are priorities from converter stages to protection circuits. With tight thermal characteristics and predictable forward/reverse behavior across temperature, it simplifies thermal design and improves overall system efficiency without complex external circuitry.
Features:
- 150°C maximum junction temperature operation.
- High-purity, high-temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
- Low forward voltage drop for efficient conduction.
- Suited for high-frequency operation.
- Guard ring for enhanced ruggedness and long-term reliability.
- Pb-free device (RoHS friendly).
- Traceability to wafer lot; additional testing available on request.
Specifications:
| Specification | Value |
|---|---|
| Peak Repetitive Reverse Voltage (VRRM): | 45 V (MBR745). |
| Average Rectified Forward Current (IF(AV)): | 7.5 A (50% duty cycle @ Tc = 131°C). |
| Peak One-Cycle Non-Repetitive Surge Current (IFSM): | 150 A (8.3 ms, half sine). |
| Peak Repetitive Reverse Surge Current (IRRM): | 1.0 A (2.0 μs, 1.0 kHz). |
| Forward Voltage (VF) @ 15 A, TJ=25°C (typ / max): | 0.55 V / 0.84 V. |
| Forward Voltage (VF) @ 7.5 A, TJ=125°C (typ / max): | 0.39 V / 0.57 V. |
| Reverse Current (IR) @ VR = rated, TJ=25°C (typ / max): | 0.02 mA / 0.1 mA. |
| Reverse Current (IR) @ VR = rated, TJ=125°C: | 20 mA (typ) / 25 mA (max). |
| Junction Capacitance (CT) @ VR = 5 V, f = 1 MHz: | 650 – 700 pF. |
| Series Inductance (LS): | ~8.0 nH (measured lead-to-lead 5 mm from package body). |
| dv/dt rating: | 10,000 V/μs. |
| Junction Temperature Range (TJ): | −55 to +150 °C. |
| Thermal Resistance, Junction-to-Case (RθJC): | 3.0 °C/W (DC). |
| Thermal Resistance, Case-to-Heatsink (RθCS): | 0.50 °C/W (mounted, greased, TO-220). |
Pinout Diagram:
Footprint Diagram:
Applications:
- Switching power supply.
- Redundant power subsystems.
- Converters.
- Free-wheeling diodes.
- Reverse battery protection.
Package Contents:
- 1x MBR745 Schottky Barrier Diode 45V 7.5A Through Hole TO-220-2
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