2SK791 N-Channel MOSFET Transistor TO-220 (850V, 3A)

Specifications:

• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation Pd: 100 W
• Maximum Drain-Source Voltage |Vds|: 850 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Drain Current |Id|: 3 A
• Maximum Junction Temperature Tj: 150 °C
• Rise Time tr: 55 nS
• Drain-Source Capacitance Cd: 120 pF
• Maximum Drain-Source On-State Resistance Rds: 4.5 Ohm
• Package: TO220AB

2SK791 Datasheet