Features:
- The 20N60 series is an N-channel enhancement mode power MOSFET using advanced technology to provide customers with planar stripe and DMOS technology.
- This technology is specialized in allowing a minimum on-state resistance and superior switching performance.
- It also can withstand high energy pulse in the avalanche and commutation mode.
- These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Pin Configurations:
Specifications:
| Product Attribute | Attribute Value |
| Datasheet | FQA20N60 |
| Product Category | MOSFETs |
| Technology | Si |
| Series | 20N60 |
| Model | FQA20N60 |
| Transistor Type | N-Channel |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Package/Case | TO-3PN |
| Mounting Type | Through Hole |
| Number of terminals | 3 |
| Vds – Drain-Source Breakdown Voltage | 600 V |
| Id – Continuous Drain Current | 20 A |
| Rds On – Drain-Source Resistance(Max.) | 0.45 Ω |
| Vgs – Gate-Source Voltage | – 30 V, + 30 V |
| Pd – Power Dissipation | 416 W |
| Typical Fall Time | 170 ns |
| Typical Rise Time | 130 ns |
| Typical Turn-Off Delay Time | 800 ns |
| Typical Turn-On Delay Time | 110 ns |
| Operating Temperature Range | -55 ℃ to +150 ℃ |
Applications:
- TV power.
- ATX power.
- Industrial power applications.
- UPS.
- Solar Inverter.
- AC-DC Power Supply.
- DC-DC Converters.
- Power Factor Correction (PFC).
- Plasma Display Panels (PDP).
- Server/Telecom power.
- lighting ballasts.
- Motion control.
Datasheet:
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