G40N60UFD IGBT Transistor 600V 40A 160W TO-3P
The G40N60UFD IGBT Transistor 600V 40A 160W TO-3P is an ultrafast Insulated Gate Bipolar Transistor designed for high-speed power switching applications. The supplied datasheet identifies the corresponding device as FGA40N60UFD and specifies a 600V collector-emitter voltage rating, 40A continuous collector current at a case temperature of 25°C, and 160W maximum power dissipation at 25°C.
Features:
- Fast Switching.
- Low VCE(sat).
- Positive temperature coefficient.
- Fast recovery anti-parallel diode.
Specifications:
| Parameter | Value |
|---|---|
| Device Type | Ultrafast IGBT. |
| Collector-Emitter Voltage (VCES) | 600V. |
| Gate-Emitter Voltage (VGES) | ±20V. |
| Collector Current (IC) at TC=25°C | 40A. |
| Collector Current (IC) at TC=100°C | 20A. |
| Pulsed Collector Current (ICM) | 160A. |
| Diode Continuous Forward Current (IF) at TC=100°C | 15A. |
| Diode Maximum Forward Current (IFM) | 160A. |
| Maximum Power Dissipation at TC=25°C | 160W. |
| Maximum Power Dissipation at TC=100°C | 64W. |
| Operating Junction Temperature | -55°C to +150°C. |
| Storage Temperature | -55°C to +150°C. |
| VGE Threshold Voltage | 3.5V to 6.5V. |
| VCE(sat) at IC=20A | 2.3Vtyp., 3.0Vmax. |
| VCE(sat) at IC=40A | 3.1Vtyp. |
| Input Capacitance (Cies) | 1075pFtyp. |
| Output Capacitance (Coes) | 170pFtyp. |
| Reverse Transfer Capacitance (Cres) | 50pFtyp. |
| Total Gate Charge (Qg) | 77nCtyp., 150nCmax. |
| Gate-Emitter Charge (Qge) | 20nCtyp., 30nCmax. |
| Gate-Collector Charge (Qgc) | 25nCtyp., 40nCmax. |
| Diode Forward Voltage (VFM) | 1.4Vtyp. at IF=15A. |
| Diode Reverse-Recovery Time (trr) | 50nstyp., 95nsmax. |
| Thermal Resistance Junction-to-Case, IGBT | 0.77°C/W. |
| Thermal Resistance Junction-to-Case, Diode | 1.7°C/W. |
| Package | TO-3P. |
| Mounting Type | Through-hole. |
Pin Configuration:
Applications:
- Welding converters
- UPS
- Boost Chopper
- Air condition