MLG60T65FUK 60T65 60A 650V TO-247 IGBT transistor
The MLG60T65FUK is a high-power IGBT built using advanced Trench Field Stop (T-FS) technology to combine low saturation voltage with optimized switching behavior. Packaged in familiar through-hole formats (TO-247 / TO-3PF / TO-3PN), it delivers strong conduction for high-current loads while keeping conduction losses low helpful where efficiency and thermal budget matter.
Designed for hard-working power stages, the device supports sustained collector current and high pulsed capability, and includes a fast-recovery anti-parallel diode for resilient commutation. Gate charge is kept moderate for reduced drive requirements, and the positive temperature coefficient improves paralleling behavior in multi-device arrangements.
With a 650 V collector-emitter rating and 60 A continuous capability (at elevated case temperature ratings shown in the datasheet), the MLG60T65FUK is suited to medium-voltage converters where ruggedness, predictable switching losses and straightforward heatsinking (TO-247 style) are priorities. The datasheet also supplies detailed safe-operating area and thermal data to aid reliable design.
Features:
- Fast switching
- Low VCE(sat).
- Positive temperature coefficient.
- Fast recovery anti-parallel diode.
- RoHS compliant product.
Specifications:
| Parameter | Symbol / Condition | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage (Breakdown) | VCES, VGE = 0 V, IC = 250 µA | 650 | V |
| Collector Continuous Current @ TC = 25°C | IC | 120 | A |
| Collector Continuous Current @ TC = 100°C | IC | 60 | A |
| Pulsed Collector Current (tp limited by TJmax) | ICM | 240 | A |
| Pulsed Short-Circuit Collector Current (tSC ≤ 5 µs) | IC(SC) | 250 | A |
| Diode Continuous Forward Current @ TC = 25°C | IF | 120 | A |
| Diode Continuous Forward Current @ TC = 100°C | IF | 60 | A |
| Diode Peak Forward Current (limited by TJmax) | IFM | 240 | A |
| Gate-Emitter Voltage (rated) | VGES | ±30 | V |
| Power Dissipation @ TC = 25°C (TO-3PN / TO-247) | PD | 375 | W |
| Power Dissipation @ TC = 25°C (TO-3PF) | PD | 62.5 | W |
| Operating Junction & Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Thermal Resistance, Junction-to-Case (IGBT, TO-3PN / TO-247) | RθJC | 0.4 | °C/W |
| Thermal Resistance, Junction-to-Case (IGBT, TO-3PF) | RθJC | 2.4 | °C/W |
| Thermal Resistance, Junction-to-Case (Diode, TO-3PN / TO-247) | RθJC (diode) | 0.75 | °C/W |
| Thermal Resistance, Junction-to-Case (Diode, TO-3PF) | RθJC (diode) | 1.88 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | °C/W |
| Collector-Emitter Saturation Voltage @ VGE = 15 V, IC = 60 A | VCE(sat) (TJ = 25°C / 125°C / 175°C) | 1.70 / 2.10 / 2.30 | V |
| Gate Threshold Voltage (VCE = VGE, IC = 1 mA) | VGE(th) | 4.7 – 6.2 (typ. 5.5) | V |
| Collector-Emitter Leakage Current @ VCE = 650 V, VGE = 0 V | ICES | 25 | µA |
| Diode Forward Voltage @ IF = 60 A (TJ = 25°C / 125°C / 175°C) | VF | 2.30 / 2.00 / 1.85 | V |
| Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1 MHz) | Ciss | 3036 | pF |
| Gate Charge (VCC = 520 V, IC = 60 A, VGE = 15 V) | QG | 137 | nC |
| Turn-on Delay Time (IC = 60 A, VCE = 400 V, VGE = 15 V, RG = 5 Ω) | td(on) | 37 | ns |
| Turn-off Delay Time (same conditions) | td(off) | 130 | ns |
| Turn-on Switching Loss (IC = 60 A, VCE = 400 V) | Eon | 1.39 | mJ |
| Turn-off Switching Loss (IC = 60 A, VCE = 400 V) | Eoff | 1.06 | mJ |
| Diode Reverse Recovery Time (IF = 30 A, di/dt = 200 A/µs, TJ = 25°C) | trr | 52 | ns |
| Diode Reverse Recovery Charge (IF = 30 A, TJ = 25°C) | Qrr | 62 | nC |
| Package Type | — | TO-247 / TO-3PF / TO-3PN | — |
| Compliance | — | RoHS Compliant | — |
Pinout Diagram:
Footprint Diagram:
Applications:
- Photovoltaic converters.
- UPS.
- Boost.
Package Contents:
- 1x MLG60T65FUK 60T65 60A 650V TO-247 IGBT transistor
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