G60N60FUK IGBT Transistor N-Channel 600V 60A TO-247
G60N60FUK IGBT Transistor N-Channel 600V 60A TO-247 Ultra-Fast N-Channel IGBT Power Transistor is a high-performance power switching device designed for industrial, inverter, and motor control applications. Combining the advantages of MOSFET gate drive and bipolar transistor output characteristics, it offers high voltage capability, low conduction losses, and fast switching performance. Rated for 600V and 60A operation, the device is housed in a TO-247 package for efficient heat dissipation and reliable operation in high-power electronic systems.
Features
- High voltage rating of 600V for demanding power applications.
- High current handling capability up to 60A.
- Fast switching performance for improved efficiency.
- Low conduction losses during operation.
- Optimized for inverter and motor drive circuits.
- Robust TO-247 package with excellent thermal characteristics.
- High reliability under industrial operating conditions.
- Low gate drive power requirements.
- Suitable for high-frequency switching applications.
- Easy integration into power control systems.
Specifications
| Parameter | Details |
|---|---|
| Part Number | G60N60FUK |
| Device Type | N Channel IGBT Transistor |
| Collector Emitter Voltage (VCES) | 600V |
| Collector Current (IC) @ TC=100°C (Continuous) | 60A |
| Collector Current (IC) @ TC=25°C (Continuous) | 120A |
| Pulsed Collector Current (ICM) | 240A |
| Gate Emitter Voltage (VGE) | ±30V |
| Power Dissipation (PD) @ TC=25°C | 375W |
| Short-Circuit Withstand Time (tSC) | 5µs |
| Junction Temperature (TJmax) | 175°C |
| Storage Temperature (Tstg) | -55°C to 175°C |
| Input Capacitance (Ciss) | 3036pF |
| Gate Charge (QG) | 137nC |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Switching Speed | Ultra Fast |
| Polarity | N Channel |
| Technology | IGBT (Insulated Gate Bipolar Transistor) |
| Application Category | Power Switching |
| Operating Mode | High Efficiency Switching |
Dimensions
Footprint Diagram
Pin Configuration
| Pin Number | Pin Name | Function / Description |
|---|---|---|
| 1 | Gate (G) | Controls the MOSFET conduction |
| 2 | Drain (D) | Connected to load and positive supply |
| 3 | Source (S) | Connected to ground or common |
Applications
- Photovoltaic inverter power stages.
- Uninterruptible Power Supplies (UPS).
- Boost / flyback converters and PFC stages.
- High-frequency motor drives and traction inverters (medium power).
- Industrial power electronics and switching modules.
- Hard-switching or soft-switching converter topologies requiring robust IGBTs.
Package Contents
- 1 x G60N60FUK IGBT Transistor N-Channel 600V 60A TO-247