2SK1940 N-Channel MOSFET Transistor 600V 12A TO-3P
The 2SK1940 is a high-performance N-Channel power MOSFET transistor designed for switching power supplies, high-speed switching circuits, inverter systems, and industrial power electronics applications. The transistor is manufactured in a TO-3P package that provides excellent thermal dissipation and reliable high-power operation for through-hole PCB designs and industrial electronic systems.
Features:
- High speed switching capability.
- Low drain-source on-state resistance for minimal conduction losses.
- No secondary breakdown mechanism ensures robust operation.
- Low driving power requirement.
- High voltage capability with 600V drain-source breakdown voltage.
- Gate-source voltage guaranteed to ±30V.
- Avalanche-proof design for enhanced ruggedness.
- Wide operating temperature range from -55°C to +150°C.
Specifications:
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDSS) | 600V |
| Drain-Gate Voltage (VDGR) | 600V (RGS=20kΩ) |
| Gate-Source Voltage (VGSS) | ±30V |
| Continuous Drain Current (ID) | 12A |
| Pulsed Drain Current (ID(puls)) | 48A |
| Maximum Power Dissipation (PD) | 125W |
| Drain-Source On-State Resistance (RDS(on)) | 0.55Ω (Typ.) / 0.75Ω (Max.) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 600V (Min.) |
| Gate Threshold Voltage (VGS(th)) | 2.5V (Min.) / 3.0V (Typ.) / 3.5V (Max.) |
| Zero Gate Voltage Drain Current (IDSS) | 10μA (Typ.) / 500μA (Max.) at Tch=25°C |
| Zero Gate Voltage Drain Current (IDSS) | 0.2mA (Typ.) / 1.0mA (Max.) at Tch=125°C |
| Gate-Source Leakage Current (IGSS) | 10nA (Typ.) / 100nA (Max.) |
| Forward Transconductance (gfs) | 6S (Min.) / 12S (Typ.) |
| Input Capacitance (Ciss) | 2500pF (Typ.) / 3800pF (Max.) |
| Output Capacitance (Coss) | 220pF (Typ.) / 330pF (Max.) |
| Reverse Transfer Capacitance (Crss) | 50pF (Typ.) / 75pF (Max.) |
| Turn-On Delay Time (td(on)) | 30ns (Typ.) / 45ns (Max.) |
| Rise Time (tr) | 60ns (Typ.) / 90ns (Max.) |
| Turn-Off Delay Time (td(off)) | 140ns (Typ.) / 210ns (Max.) |
| Fall Time (tf) | 80ns (Typ.) / 120ns (Max.) |
| Avalanche Capability (IAV) | 12A at L=100μH, Tch=25°C |
| Continuous Reverse Drain Current (IDR) | 12A |
| Pulsed Reverse Drain Current (IDRM) | 48A |
| Diode Forward On-Voltage (VSD) | 1.05V (Typ.) / 1.58V (Max.) |
| Reverse Recovery Time (trr) | 450ns (Typ.) |
| Reverse Recovery Charge (Qrr) | 3μC (Typ.) |
| Thermal Resistance (Rth(ch-c)) | 1.25°C/W |
| Thermal Resistance (Rth(ch-a)) | 35°C/W |
| Storage Temperature Range | -55°C to +150°C |
| Channel Temperature (Tch) | 150°C (Max.) |
| Package Type | TO-3P |
| Mounting Style | Through-Hole |
Applications:
- Switching regulator designs.
- Uninterruptible power supply (UPS) systems.
- DC-DC converter circuits.
- General purpose power amplifier applications.
- High speed power switching.
- Power management systems.
Package Include:
1x 2SK1940 N-Channel MOSFET Transistor TO-3P.