2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220

2SK3294 is an N-channel 250V 20A power MOSFET in a TO-220 package, featuring low on-resistance and built-in ESD protection for DC/DC converters.

30.00 EGP

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SKU:3496300151028
2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220

The 2SK3294 is an N-channel MOS FIELD EFFECT TRANSISTOR designed specifically for high-voltage switching applications. It features exceptionally low on-state resistance alongside excellent switching characteristics. The device includes an internal gate protection diode structure that serves as a protector against electrostatic discharge.

Features
  • Low On-State Resistance
  • Low Input Capacitance
  • High Gate Voltage Rating
  • Avalanche Capability Rated
  • Built-in Gate Protection Diode
Specifications
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Rating Parameters Symbol Value Unit
Drain to Source Voltage (VGS = 0 V) VDSS 250 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±20 A
Drain Current (Pulse)Note 1 ID(pulse) ±60 A
Total Power Dissipation (TC = 25°C) PT1 100 W
Total Power Dissipation (TA = 25°C) PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C
Single Avalanche CurrentNote 2 IAS 20 A
Single Avalanche EnergyNote 2 EAS 150 mJ
Electrical Characteristics (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 100 μA
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 μA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V
Forward Transfer Admittance |yfs| VDS = 10 V, ID = 10 A 6.0 S
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 10 A 120 160
Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 1500 pF
Output Capacitance Coss 360 pF
Reverse Transfer Capacitance Crss 220 pF
Turn-on Delay Time td(on) VDD = 125 V, ID = 10 A, VGS = 10 V, RG = 10 Ω 24 ns
Rise Time tr 78 ns
Turn-off Delay Time td(off) 110 ns
Fall Time tf 60 ns
Total Gate Charge QG VDD = 200 V, VGS = 10 V, ID = 20 A 57 nC
Gate to Source Charge QGS 8 nC
Gate to Drain Charge QGD 36 nC
Body Diode Forward Voltage VF(S-D) IF = 20 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 20 A, VGS = 0 V, di/dt = 50 A/μs 340 ns
Reverse Recovery Charge Qrr 2.1 μC
Applications
  • DC/DC Converter systems
  • Actuator Drivers
  • General switching circuits in consumer and industrial equipment
Package Content
  • 1 x 2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220
DataSheet
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