2N5784 NPN Transistor 65V 3.5A TO–39

The 2N5784 is a general-purpose NPN power transistor commonly used for power switching, linear amplification, motor control, power regulation, and industrial electronic applications.

45.00 EGP

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2N5784 NPN Transistor 65V 3.5A TO–39

The 2N5784 is a silicon epitaxial NPN power transistor designed for both switching and linear amplifier applications. Housed in a rugged hermetic TO-39 metal package, it offers excellent reliability and thermal performance, making it suitable for demanding industrial, military, and commercial electronic systems. The device is capable of handling relatively high collector currents while maintaining good gain characteristics across a wide operating range.

With its combination of high voltage capability, substantial current handling, and fast switching performance, the 2N5784 is well suited for power drivers, relay control circuits, audio amplifiers, voltage regulators, DC power converters, and other medium-power applications. The hermetically sealed package also provides enhanced environmental protection compared to conventional plastic transistor packages.

Features:
  • Silicon epitaxial NPN transistor.
  • Designed for switching and linear applications.
  • High current handling capability.
  • Hermetically sealed metal package.
  • Suitable for power amplification.
  • Fast switching characteristics.
  • Good DC current gain.
  • Low saturation voltage.
  • High reliability construction.
  • Excellent thermal performance.
  • Suitable for industrial applications.
  • Suitable for power control circuits.
  • Robust TO-39 package.
  • Wide operating temperature range.
  • Compatible with analog and digital switching circuits.
Specifications:
Parameter Value
Transistor Type NPN
Collector-Emitter Voltage (VCEO) 65V
Collector-Base Voltage (VCBO) 80V
Collector-Emitter Sustaining Voltage (VCER) 80V
Emitter-Base Voltage (VEBO) 5V
Continuous Collector Current (IC) 3.5A
Continuous Base Current (IB) 1A
Power Dissipation (TA = 25°C) 1W
Power Dissipation (TC = 25°C) 10W
DC Current Gain (hFE) @ IC=1A 20 – 100
DC Current Gain (hFE) @ IC=3.2A 4 Minimum
Collector-Emitter Saturation Voltage 0.5V Maximum
Base-Emitter Voltage 1.5V Maximum
Turn-On Time 5µs Maximum
Turn-Off Time 20µs Maximum
Junction Temperature Range -65°C to +200°C
Storage Temperature Range -65°C to +200°C
Package TO-39 Metal Can
Pinout:
Pin Function
1 Emitter
2 Base
3 Collector
Applications:
  • Power switching circuits.
  • Linear power amplifiers.
  • Audio amplifier output stages.
  • Relay and solenoid drivers.
  • DC motor control.
  • Power regulators.
  • Industrial control systems.
  • Power supply circuits.
  • Driver stages.
  • Battery-powered equipment.
  • Signal amplification.
  • General-purpose power electronics.
Package Included:
  • 1x 2N5784 NPN Transistor 65V 3.5A TO–39.
Documents:
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