11N80 MOSFET Transistor 800V 11A
The 11N80 MOSFET Transistor 800V 11A TO-220F is a rugged N-Channel power MOSFET developed for high-voltage switching applications in demanding industrial and consumer power electronics systems. This device utilizes advanced CoolMOS™ C3 technology to achieve low conduction and switching losses, enabling superior efficiency and thermal performance in buck, boost, and high DC bulk voltage converters.
Features:
- High Blocking Voltage: Rated for 800V Drain-Source voltage, providing ample margin for high-voltage mains applications.
- Low On-Resistance: Typical RDS(on) of approximately 0.45Ω ensures minimal conduction losses during operation.
- Low Gate Charge: Reduced gate charge (Qg) improves switching speed and reduces drive circuit power requirements.
- Avalanche Ruggedness: 100% avalanche tested to withstand high energy pulses during fault conditions.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage | 800V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 11A |
| Pulsed Drain Current | 33A |
| Power Dissipation | 34W |
| On-State Resistance (Max) | 0.45Ω |
| Gate Charge (Typical) | 64nC |
| Input Capacitance (Typical) | 1600pF |
| Output Capacitance (Typical) | 65pF |
| Gate Threshold Voltage (Max) | 3.9V |
| Operating Junction Temperature | -55°C to 150°C |
| Package | TO-220F |
Pin Configuration:
Applications:
- Switching regulators and power conversion circuits.
- High-voltage DC-DC converters and inverters.
- Industrial motor drive and control systems.
- AC-DC switch-mode power supplies (SMPS).
- Power factor correction (PFC) stages.
- High-efficiency power management applications.
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