1N5711 Schottky Diode
The 1N5711 is a small‑signal, metal‑to‑silicon Schottky barrier diode housed in a DO‑35 glass package. It features very low forward voltage and ultrafast switching, making it ideal for high‑frequency detection and pulse applications up to UHF/VHF bands.
Features
- Low forward voltage: typ. 0.41 V at IF = 1 mA
- High reverse voltage: VRRM = 70 V
- Ultra-fast switching: storage time τ ≈ 100 ps
- Low junction capacitance: Cj ≈ 2 pF @ VR = 0 V, f = 1 MHz
- Low reverse leakage: IR ≤ 0.2 µA @ VR = 50 V
- Wide temperature range: –65 °C to +200 °C
- Compact DO-35 glass package
Specifications
Absolute Maximum Ratings (Ta = 25 °C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 70 | V |
| Forward Continuous Current | IF | 15 | mA |
| Power Dissipation | Ptot | 430 | mW |
| Storage & Junction Temperature | Tstg, Tj | –65 to +200 | °C |
| Soldering Temperature (10 s) | TL | 230 | °C |
| Thermal Resistance (j–a) | RθJA | 400 | °C/W |
Electrical Characteristics (Ta = 25 °C)
| Characteristic | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Breakdown Voltage | IR = 10 µA | 70 | V | ||
| Forward Voltage | IF = 1 mA | 0.41 | V | ||
| Forward Voltage | IF = 15 mA | 1.0 | V | ||
| Reverse Leakage Current | VR = 50 V | 0.2 | µA | ||
| Junction Capacitance | VR = 0 V, f = 1 MHz | 2 | pF | ||
| Storage Time (τ) | IF = 5 mA (Krakauer Method) |
100 | ps |
Applications
- UHF/VHF envelope detectors and mixers
- High‑speed pulse detection and sampling
- Clamp, steering, and voltage‑reference circuits
- RF detector diodes in communication modules
- Fast‑recovery switching in logic‑level applications
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