1N5820 Schottky Diode 3A 20V 475mV@3A DO-201AD
The 1N5820 is a preferred power diode that employs the Schottky Barrier principle in a large-area metal-to-silicon construction. It features state-of-the-art geometry, including chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact. This series is specifically designed for efficiency in low-voltage and high-frequency environments.
✅Features
- High Efficiency
- Fast Switching
- Mechanical Durability
📜📚Specifications
| Rating / Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Ratings | |||
| Peak Repetitive Reverse Voltage | VRRM | 20 | V |
| Working Peak Reverse Voltage | VRWM | 20 | V |
| DC Blocking Voltage | VR | 20 | V |
| Non-Repetitive Peak Reverse Voltage | VRSM | 24 | V |
| RMS Reverse Voltage | VR(RMS) | 14 | V |
| Average Rectified Forward Current (TL = 95°C) | IO | 3.0 | A |
| Non-Repetitive Peak Surge Current (Half-wave, 60 Hz) | IFSM | 80 | A |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +125 | °C |
| Thermal Characteristics | |||
| Thermal Resistance, Junction-to-Ambient (Max) | RθJA | 28 | °C/W |
| Electrical Characteristics (TL = 25°C) | |||
| Maximum Instantaneous Forward Voltage (IF = 1.0 A) | VF | 0.370 | V |
| Maximum Instantaneous Forward Voltage (IF = 3.0 A) | VF | 0.475 | V |
| Maximum Instantaneous Forward Voltage (IF = 9.4 A) | VF | 0.850 | V |
| Maximum Instantaneous Reverse Current (at Rated DC Voltage) | IR | 2.0 | mA |
| Maximum Instantaneous Reverse Current (TL = 100°C) | IR | 20 | mA |
| Mechanical Data | |||
| Package Type | – | Axial Lead (DO-201AD) | – |
| Weight (Approximate) | – | 1.1 | g |
💻Applications
- Low-voltage, high-frequency inverters
- Free-wheeling diodes
- Polarity protection diodes
🎁Package Content
- 1 x 1N5820 Schottky Diode 3A 20V 475mV@3A DO-201AD
Reviews
There are no reviews yet.