2N2222 NPN Metal Transistor 75V 800mA TO-18

2N2222 is a fast-switching NPN transistor in a TO-18 metal can, handling 800 mA and 75 V ideal for amplification and general-purpose switching tasks.

12.00 EGP

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SKU:3496300064526
2N2222 NPN Metal Transistor 75V 800mA TO-18

The 2N2222A is a silicon planar epitaxial NPN transistor housed in a JEDEC TO-18 hermetic metal can, engineered for fast switching and robust performance in low- to medium-power circuits. Fabricated with a precision epitaxial process, it delivers reliable operation at collector currents up to 800 mA and withstands reverse voltages to 75 V between collector and base. Its metal package affords excellent thermal conductivity and mechanical stability, making it well suited for environments where temperature cycling and vibration are concerns.

Internally, the transistor features a lightly doped base region that yields a useful DC current gain across a broad range of operating currents, ensuring consistent amplification whether used in small-signal switching or driver stages. Leakage currents are kept to a minimum, while saturation voltages remain low under 0.3 V at 150 mA allowing efficient conduction with minimal power loss. The device tolerates storage temperatures from –65 °C to +200 °C and operates up to a junction temperature of 175 °C.

With a transition frequency (fT) of around 300 MHz and tight parameter tolerances, the 2N2222A excels in applications demanding rapid response and stable gain, such as high-speed switching, digital logic interfaces, and pulse-width modulation drivers.

Features:

  • Silicon planar epitaxial NPN structure in TO-18 metal can
  • Fast switching capability up to 800 mA collector current
  • Wide DC current-gain range across collector currents
  • Very low leakage currents
  • Low saturation voltage (< 0.3 V @ 150 mA)
  • High transition frequency (~ 300 MHz)
  • Wide operating junction temperature (–65 °C to +175 °C)

 Technical Specifications:

Parameter Value
Collector–Base Voltage, VCBO: 75 V
Collector–Emitter Voltage, VCEO: 40 V
Emitter–Base Voltage, VEBO: 6 V
Collector Current, IC: 800 mA
Total Dissipation Tamb ≤ 25 °C, Ptot (TO-18): 0.5 W
Total Dissipation Tcase ≤ 25 °C, Ptot (TO-18): 1.8 W
Thermal Resistance Rth (j–c): 83.3 °C/W
Thermal Resistance Rth (j–amb): 300 °C/W
Saturation Voltage, VCE(sat): 0.3 V  150 mA
1 V  500 mA
DC Current Gain, hFE: 35 – 100 (dependent on IC)
Transition Frequency, fT: 300 MHz
Transistor Type: NPN

Applications:

  • General-purpose switching.
  • Signal amplification.
  • Pulse-width modulation (PWM) control.
  • Digital logic interfacing.
  • Relay driver circuits.
  • Audio amplifier stages.
  • Motor control circuits.
  • Oscillator and timer circuits.
  • LED driver circuits.
  • High-speed switching applications.
Package Contents:
  • 1x  2N2222 NPN Metal Transistor 75V 800mA TO-18

2N2222 Datasheet

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