2N4401 NPN Transistor TO-92
TO-92 silicon NPN transistor 2N4401 medium-power amplifier/switch device with low saturation, fast switching and Tj up to 150 °C.
1.50 EGP
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The 2N4401 is a silicon NPN transistor provided in a TO-92 plastic package, designed for medium-power amplification and switching. It balances low-voltage operation with relatively high collector capability, making it suitable for circuits where compact size and reliable switching are required. The transistor’s TO-92 form factor gives it easy mounting and good mechanical stability for through-hole assembly.
Internally optimized for higher current handling than many small-signal transistors, the device supports robust operation up to elevated junction temperatures and includes characteristics that make thermal management straightforward in modest power designs. The device’s construction and specified electrical behavior provide predictable gain and saturation performance across a practical range of operating currents, which helps simplify biasing and drive arrangements in amplifier and driver stages.
With fast switching times, an adequate current-gain profile at various collector currents, and conservative absolute-rating margins, the 2N4401 suits a broad set of applications from intermediate amplifier stages to transistor switches and driver tasks. Its documented limits for voltages, currents and thermal ratings make it easy to integrate into designs while preserving reliability under normal assembly and thermal conditions.
Features:
- Silicon NPN transistor in TO-92 plastic package.
- High current / low voltage device (suitable for medium-power use).
- Rated for elevated junction temperatures (Tj up to 150 °C).
- Good saturation characteristics at moderate drive currents.
- Fast switching performance (ns-scale delay/transition times).
- Standard TO-92 pinning (Pin1: Collector, Pin2: Base, Pin3: Emitter) for straightforward PCB layout.
| Specification | Value (from datasheet) |
|---|---|
| Collector-Base Voltage, VCBO: | 60 V |
| Collector-Emitter Voltage, VCEO: | 40 V |
| Emitter-Base Voltage, VEBO: | 6.0 V |
| Collector Current – Continuous, IC: | 600 mA (absolute rating) |
| Collector Power Dissipation, PC: | 625 mW |
| Junction Temperature, Tj: | −55 to +150 °C |
| Storage Temperature, Tstg: | −55 to +150 °C |
| Collector Cut-Off Current, ICBO: | ≤ 50 nA (VCB = 60 V) |
| Emitter Cut-Off Current, IEBO: | ≤ 50 nA (VEB = 6.0 V) |
| DC Current Gain, hFE (examples): | hFE(1): 100–300 @ VCE=1 V, IC=150 mA; hFE(3): 80 @ VCE=1 V, IC=10 mA; etc |
| VCE(sat) (1): | 0.4 V (IC=150 mA, IB=15 mA) |
| VCE(sat) (2): | 0.75 V (IC=500 mA, IB=50 mA) |
| VBE(sat) (1): | 0.75 – 0.95 V (IC=150 mA, IB=15 mA) |
| VBE(sat) (2): | ~1.2 V (IC=500 mA, IB=50 mA) |
| Current-Gain-Bandwidth Product, fT: | ≈ 250 MHz (VCE=10 V, IC=20 mA, f=100 MHz) |
| Switching times : | td ≈ 15 ns; tr ≈ 20 ns; ts ≈ 225 ns; tf ≈ 30 ns |
Pinout Diagram:
Footprint Diagram:
Applications:
- Medium-power amplifier.
- Switching circuits / transistor switch.
- Driver stages for moderate loads.
Package Contents:
- 1x 2N4401 NPN Transistor TO-92
Datasheet
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