2N6124 Bipolar (BJT) Single Transistor PNP 45V 4A 40W TO-220 Through Hole

2N6124 Bipolar (BJT) Single Transistor PNP 45V 4A 40W TO-220 Through Hole

The 2N6124 is a silicon PNP power transistor in a through-hole TO-220 package, engineered to serve as a rugged switching and amplification device in power electronics. Its design emphasises robust handling of collector-emitter stresses and reliable electrical behavior under repetitive switching conditions. The device’s mechanical format (TO-220) enables easy mounting and effective heat sinking for sustained power operation.

Electrically, the transistor is intended to deliver controlled, predictable PNP switching performance across a range of drive conditions. The datasheet frames the device for use where stable gain and repeatable saturation characteristics are required, noting that drive margins and saturation behavior have been optimized to support both continuous and pulsed loads. Thermal design guidance and ratings are provided to help ensure that the transistor maintains performance when subjected to high dissipation and temperature stresses.

Emphasis in the datasheet is placed on manufacturing consistency and long-term reliability, making the 2N6124 suitable for demanding power amplifier and switching roles in consumer and industrial equipment. The combination of a robust semiconductor process, conservative thermal limits, and a common through-hole package helps designers integrate the part into systems that require straightforward mounting, maintainable cooling, and predictable service life.

Features:

• Silicon PNP power transistor (TO-220 through-hole).
• Complement to type 2N6121.
• Minimum lot-to-lot variations for robust device performance and reliable operation.

Specifications:

Applications:

• Power amplifier circuits.
• Switching circuits.

Package Contents:

• 1x 2N6124 Bipolar (BJT) Single Transistor PNP 45V 4A 40W TO-220 Through Hole

2N6124 Datasheet