2N7000 N-Channel Small MOSFET Signal 60V, 200mA – Original
The 2N7000 is a compact N-channel enhancement-mode MOSFET designed for signal-level switching and low-power control. It uses onsemi’s high-density DMOS cell structure to minimize on-state resistance while keeping package size small. Engineered for predictable gate behavior, it accepts modest gate voltages and is straightforward to drive from logic signals or microcontroller GPIOs, making circuit integration fast and reliable.
Optimized for fast switching at low currents, the device delivers consistent performance across a wide temperature range and handles short pulsed currents above its continuous rating. Its low input capacitance and modest gate charge reduce switching losses in small-signal applications. Designers value its clean turn-on and turn-off transitions for avoiding unwanted oscillation in sensitive analog and mixed-signal circuits.
Offered in both through-hole (TO-92) and surface-mount (SOT-23) package CASE 135AR, the 2N7000 suits both prototyping and space-constrained production uses. Its combination of ruggedness, simple gate requirements, and low thermal demands makes it ideal for signal-level switching, level shifting, and driver roles in consumer electronics, industrial controls, and hobbyist projects. Its simple handling and robust tolerance simplify assembly and maintenance in varied environments.
Features:
- High density DMOS cell design for low RDS(on).
- Voltage-controlled small-signal switching behavior.
- Rugged and reliable construction.
- High saturation and pulsed current capability.
- Pb-Free and halogen-free manufacturing.
Specifications:
| Parameter | Symbol | Value | Conditions | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | Continuous | V |
| Continuous Drain Current | ID | 200 | TC = 25°C | mA |
| Pulsed Drain Current | IDM | 500 | mA | |
| Maximum Power Dissipation | PD | 400 | TC ≤ 25°C | mW |
| Thermal Characteristic | ||||
| Junction-to-Ambient Thermal Resistance | RθJA | 312.5 | °C/W | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 min | VGS = 0 V, ID = 10 µA | V |
| Gate Threshold Voltage | VGS(th) | 0.8 – 3.0 | VDS = VGS, ID = 1 mA | V |
| Static Drain-Source On-Resistance | RDS(on) | 5 max | VGS = 10 V, ID = 500 mA | Ω |
| Static Drain-Source On-Resistance | RDS(on) | 5.3 max | VGS = 4.5 V, ID = 75 mA | Ω |
| Zero Gate Voltage Drain Current | IDSS | 1 max | VDS = 48 V, VGS = 0 V | µA |
| Forward Transconductance | gfs | 100 min | VDS = 10 V, ID = 200 mA | mS |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 20 typ | VDS = 25 V, VGS = 0 V, f = 1 MHz | pF |
| Output Capacitance | Coss | 11 typ | VDS = 25 V, VGS = 0 V, f = 1 MHz | pF |
| Reverse Transfer Capacitance | Crss | 4 typ | VDS = 25 V, VGS = 0 V, f = 1 MHz | pF |
| Turn-On Time | ton | 10 max | VDD=15V, ID=500mA, RGEN=25Ω | ns |
| Turn-Off Time | toff | 10 max | VDD=15V, ID=500mA, RGEN=25Ω | ns |
Pinout Diagram:
Footprint Diagram:
Applications:
- Low-Side Switching for Microcontroller Loads.
- Logic Level Signal Inversion.
- Driving Small Relays and Solenoids.
- LED Lighting Control and Dimming.
- Multiplexing Digital Signals (Analog Switch).
- Motor Direction Control in H-Bridge Circuits.
- Protecting Input/Output Pins with Clamp Diodes.
- Simple Oscillator and Waveform Generator Circuits.
- Level Shifting Between Different Voltage Domains.
- Solid-State Relay for Low-Power Applications.
Package Contents:
- 1x 2N7000 N-Channel Small MOSFET Signal 60V, 200mA TO−92
CASE 135AR – Original
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