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2N7002K 7002 N Channel MOSFET SMD 60V 340mA 0.35W 1.7Ω@4.5V SOT-23

Parameter Value
Model Number 7002-2N7002K
Component Description 60V 340mA N-Channel MOSFET
Package SOT-23
Datasheet Datasheet 

1.50 EGP

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2N7002K 7002 N Channel MOSFET SMD 60V 340mA 0.35W 1.7Ω@4.5V SOT-23

The 2N7002K 7002 N Channel MOSFET is a compact N-channel enhancement-mode MOSFET designed for voltage-controlled switching applications. The device is rated for a drain-source voltage of 60V and a continuous drain current of 340mA, making it suitable for low-power switching and signal-control applications. The exact C17702881 listing specifies a maximum power dissipation of 350mW and an RDS(on) of 1.7Ω at a 4.5V gate-source voltage.

Features:
  • N-channel MOSFET.
  • 60V drain-source voltage.
  • 340mA continuous drain current.
  • 350mW maximum power dissipation.
  • 1.7Ω maximum RDS(on) at 4.5V gate-source voltage.
Specifications.
Parameter Value
Component Type N-Channel MOSFET
Model Number 7002-2N7002K
Channel Type N-Channel
Number of Channels 1
Drain-Source Voltage (VDS) 60V
Continuous Drain Current (ID) 340mA
Power Dissipation (PD) 350mW
Gate Threshold Voltage (VGS(th)) 2.5V maximum
Drain-Source On Resistance (RDS(on)) 1.7Ω @ 4.5V
Input Capacitance (Ciss) 40pF
Output Capacitance (Coss) 30pF
Reverse Transfer Capacitance (Crss) 10pF
Package SOT-23
Mounting Type Surface Mount
Operating Temperature -55°C to +150°C
ESD Protection 2kV HBM

Foot print:

Applications:
  • Load switching for portable electronic devices.
  • DC/DC converter circuits.
  • Small-signal switching.
  • Electronic switching circuits.
  • Low-power control circuits.
  • Logic-controlled switching applications.
  • Battery-powered electronic equipment.
  • Portable electronic devices.
  • Compact PCB designs.
  • General-purpose MOSFET switching applications.
Package Include:

1x 2N7002K 7002 N Channel MOSFET SMD 60V 340mA 0.35W 1.7Ω@4.5V SOT-23

Datasheet 

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