Specifications:
- Type Designator: 2SB1366
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 25 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Package: TO-220
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