2SC3198 NPN TO-92 Bipolar Transistors – BJT
The 2SC3198 is a high‑gain, low‑noise silicon NPN bipolar junction transistor in a TO‑92 package. Designed for low‑frequency and low‑noise amplifier stages, it offers excellent linearity and robust lot‑to‑lot consistency.
Features
- High DC current gain: hFE = 70–700 at IC = 2 mA
- Excellent hFE linearity
- Excellent safe operating area
- Low noise figure for cleaner amplification
Specifications
Absolute Maximum Ratings (Ta = 25 °C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector‑Base Voltage | VCBO | 60 | V |
| Collector‑Emitter Voltage | VCEO | 50 | V |
| Emitter‑Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 150 | mA |
| Power Dissipation (@TC= 25 °C) | PC | 400 | mW |
| Junction Temperature | TJ | 125 | °C |
| Storage Temperature Range | Tstg | –55 to 125 | °C |
Electrical Characteristics (Ta = 25 °C)
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCE(sat) (sat. voltage) | IC=100 mA, IB=10 mA | 0.25 | V | ||
| VBE(sat) | IC=100 mA, IB=10 mA | 1.0 | V | ||
| ICBO (off‑current) | VCB=60 V, IE=0 | 0.1 | µA | ||
| IEBO | VEB=5 V, IC=0 | 0.1 | µA | ||
| DC current gain, hFE (low‑current) | IC=2 mA, VCE=6 V | 70 | — | 700 | |
| DC current gain, hFE (high‑current) | IC=150 mA, VCE=6 V | — | — | 25 | |
| Gain‑bandwidth product, fT | IC=1 mA, VCE=10 V | — | 80 | MHz | |
| Collector capacitance, Cob | VCB=10 V, IE=0, f=1 MHz | 3.0 | pF | ||
| Base resistance, Rbb′ | VCE=10 V, IE=−1 mA, f=30 MHz | — | 50 | Ω | |
| Noise figure, NF | VCE=6 V, IC=0.1 mA, f=1 kHz, RG=10 kΩ | 10 | dB |
Applications
- Low‑frequency amplifier stages
- Low‑noise amplifier circuits
- General‑purpose signal amplification
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