The 2SC3807 is a high-gain, high-current NPN bipolar power transistor designed for general-purpose low-frequency amplification and driver applications.
The 2SC3807 is a silicon NPN epitaxial planar transistor optimized for low-frequency power amplifier and driver circuits. With a collector current rating up to 2 A, low saturation voltage, and exceptionally high DC current gain, it delivers excellent performance in amplifying stages where both voltage and current gains are needed. Typical uses include audio output stages, small power amplification, and driver stages in consumer and industrial electronics. Its robust TO-126 package allows moderate power dissipation with heatsinking.
Features:
NPN bipolar junction transistor.
High DC current gain.
Low saturation voltage.
Continuous collector current up to 2A.
Fast response for low-frequency circuits.
Excellent thermal stability.
Through-hole TO-126 package.
Large current capacity (I=2A) Adoption of MBIT process.
High DC current gain (h-800 to 3200) FE.
Low collector-to-emitter saturation voltage (VCE(sat)0.SV) High VEBO (VEROZ15V).
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