2SJ174 P-Channel MOSFET Transistor 60V 30A TO-220
The 2SJ174 P-Channel MOSFET Transistor 60V 30A TO-220 is a high-current, high-voltage power device built on TrenchFET® technology. Rated for 60 V drain-source voltage and 30 A continuous drain current, it delivers extremely low on-resistance (0.055 Ω at VGS=–10 V) and fast switching, with typical total gate charge of 67 nC. The 2SJ174 is tested 100% for gate resistance and withstands unclamped inductive switching (UIS), making it ideal for load-switching, DC/DC converters, and other demanding power-switch applications.
Features
- TrenchFET® power MOSFET for low conduction and switching losses.
- Drain-source voltage VDSS = 60 V.
- Continuous drain current ID = 30 A (TC=25 °C).
- On-state resistance RDS(ON) = 0.055 Ω at VGS=10 V.
- Total gate charge Qg ≈ 67 nC at VDS=30 V, VGS=10 V.
- Avalanche energy rating EAS = 51 mJ, pulsed current IDM = –100 A.
- 100 % gate-resistance and UIS tested for reliability.
- Thermal resistances: RθJC = 3 °C/W; RθJA = 60 °C/W (PCB mount).
Specifications
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Drain–Source Voltage | VDSS | –60 | V |
| Gate–Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current | ID | –30 | A |
| Pulsed Drain Current (t = 300 μs) | IDM | –100 | A |
| Avalanche Current | IAS | –32 | A |
| Single Avalanche Energy (L = 0.1 mH) | EAS | 51 | mJ |
| Maximum Power Dissipation (TC = 25 °C) | PD | 41.7 | W |
| Maximum Power Dissipation (TA = 25 °C) | PD | 2.1 | W |
| Operating Junction & Storage Temperature Range | TJ, Tstg | –55 to +150 | °C |
Dimensions
Applications
- High-side and low-side power switches.
- DC/DC converter synchronous rectification.
- Motor drivers and load-switching circuits.
- Telecom and server power supplies.
- Automotive and industrial power management.
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