2SK2129 800V 3A MOSFET Transistor TO-220F
The 2SK2129 is a silicon N-channel power F-MOSFET designed for high-voltage switching applications. It’s built to handle harsh switching conditions (avalanche-capable device) and to be driven directly from typical gate-drive voltages used in power electronics. The device is aimed at circuits where a compact, through-hole package and robust high-voltage blocking are required — for example contactless relays, solenoid/diving circuits, motor drivers, and switching power supplies.
Mechanically the device is supplied in a TO-220 style insulated package (datasheet shows TO-220E) which makes it straightforward to mount on small heatsinks or into power assemblies. Thermal design matters for continuous few-amp operation: the part has a modest thermal resistance to case and a maximum channel temperature rating, so you should plan for heat-sinking if you operate near rated power. The transistor is optimized for reasonably fast switching with good ruggedness (no secondary breakdown) for reliable use in inductive loads.
Features:
- High-voltage N-channel power MOSFET.
- Avalanche-robust construction for safe switching of inductive loads.
- Wide gate tolerance for robust gate drive handling.
- Designed for fast switching (low switching losses).
- Through-hole TO-220 style packaging for easy mounting and heat-sink attachment.
- Good ruggedness (no secondary breakdown).
Specifications:
| Parameter | Symbol | Value | Unit | Conditions / notes |
|---|---|---|---|---|
| Drain–Source breakdown voltage | VDSS | 800 | V | Absolute max (TC = 25°C) |
| Gate–Source voltage (allowable) | VGSS | ±30 | V | Absolute max |
| Drain current (DC) | ID | ±3 | A | Absolute max (TC = 25°C) |
| Drain current (pulsed) | IDP | ±6 | A | Pulse rating |
| Avalanche energy capacity | EAS | 20 | mJ | Guaranteed per conditions |
| Allowable power dissipation | PD | 50 | W | TC = 25°C |
| Thermal resistance (channel-to-case) | Rth(ch–c) | 2 | °C/W | |
| Maximum channel/junction temperature | Tch / Tj | 150 | °C | Absolute max |
| Storage temperature | Tstg | −55 to +150 | °C |
Pinout:
| Pin | 1 | 2 | 3 |
|---|---|---|---|
| Name | Gate | Drain | Source |
Applications:
- Contactless/solid-state relays.
- Solenoid / diving circuits.
- Motor drive switching stages (small motors).
- Control equipment and general high-voltage switching.
- Switching power supplies (high-voltage side).
Packages:
- 1x 2SK2129 MOSFET Transistor 800V 3A TO-220E.
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