2SK2889 Toshiba N-Channel Power MOSFET Transistor 600V 10A TO-262

The 2SK2889 (K2889) is designed for switching power supply circuits, motor drivers, and industrial power control applications.

50.00 EGP

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2SK2889 Toshiba N-Channel Power MOSFET Transistor 600V 10A TO-262

The 2SK2889 (K2889) from Toshiba is an enhancement-mode N-Channel power MOSFET built for demanding power electronics applications. It features a 600V drain-source voltage rating and can handle up to 10A continuous drain current while maintaining a low on-state resistance that minimizes conduction losses. The rugged TO-262 package allows efficient heat dissipation and easy mounting to a heatsink, making it ideal for SMPS circuits, DC-DC converters, motor control systems, and industrial switching applications.

Features:
  • N-Channel enhancement-mode MOSFET.
  • High voltage capability up to 600V.
  • Continuous drain current up to 10A.
  • Low on-state resistance (0.54Ω).
  • Excellent thermal and power dissipation performance.
  • Designed for SMPS and motor drive circuits.
  • TO-262 through-hole package.
Specifications:
Parameter Symbol Value Unit
Part Number: 2SK2889 (K2889)
Transistor Type: N-Channel MOSFET
Package: TO-262
Drain-Source Voltage: VDS 600 V
Gate-Source Voltage: VGS ±30 V
Continuous Drain Current: ID 10 A
Pulse Drain Current: IDP 40 A
Drain-Source On Resistance: RDS(on) 0.54 Ω
Power Dissipation: PD 100 W
Junction Temperature: TJ −55 to +150 °C

Pinout:

Pin Name Description
1 Gate Control terminal
2 Drain High-voltage power terminal
3 Source Output / return terminal
Applications:
  • Switching Mode Power Supplies (SMPS).
  • DC-DC converters.
  • Motor control circuits.
  • Industrial power switching.
  • High-voltage regulators.
Packages:
  • 1x K2889 Toshiba N-Channel Power MOSFET Transistor 600V 10A TO-262.
Documents:

Datasheet

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