High-Performance SGT40N60FD2 IGBT Transistor for Power Applications
Features:
- 40A, 600V, Vce(sat)(typ.)=1.8V@Ic=40A
- Low conduction loss
- Fast switching
- High input impedance
Specifications:
| Type | Description |
| Category | TransistorsIGBTs Single IGBTs |
| Voltage – Collector Emitter Breakdown (Max) | 600 V |
| Current – Collector (Ic) (Max) | 80 A |
| Current – Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic (TJ=25℃) | 2.7V @ 15V, 40A |
| Power – Max | 380 W |
| Input Type | Standard |
| Gate Charge | 100 nC |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P |
Applications:
- Welding converters
- UPS
- Boost Chopper
- Air condition
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