40T03 N-Channel MOSFET Transistor
The 40T03 N-Channel MOSFET Transistor is a high-performance enhancement mode power MOSFET engineered to deliver superior efficiency and reliability in modern electronic circuits. Manufactured by GTM Corporation, this component features a drain-source voltage rating of 30V, a low on-resistance of 25mΩ, and a continuous drain current capability of up to 28A at 25°C, making it an excellent choice for applications requiring robust power handling with minimal losses. Its ruggedized design ensures durability under demanding conditions, while the low gate charge facilitates simple drive requirements, reducing the complexity of supporting circuitry.
Features:
- Low gate charge for efficient operation.
- Simple drive requirements reducing circuit complexity.
- Fast switching characteristics for high-speed applications.
- Ruggedized design ensuring durability.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current (at 25°C) | 28A |
| Continuous Drain Current (at 100°C) | 24A |
| Pulsed Drain Current | 95A |
| Total Power Dissipation (at 25°C) | 31.25W |
| Gate Threshold Voltage | 1.0-3.0V |
| Static Drain-Source On-Resistance (at VGS=10V) | 25mΩ |
| Static Drain-Source On-Resistance (at VGS=4.5V) | 45mΩ |
| Forward Transconductance | 15S |
| Input Capacitance | 655pF |
| Output Capacitance | 145pF |
| Reverse Transfer Capacitance | 95pF |
| Total Gate Charge | 8.8nC |
| Turn-On Delay Time | 6ns |
| Rise Time | 62ns |
| Turn-Off Delay Time | 16ns |
| Fall Time | 4.4ns |
| Source-Drain Diode Forward Voltage | 1.3V |
| Operating Temperature Range | -55to+150°C |
Applications:
- DC/DC converters for power regulation.
- Low-voltage power management systems.
- Motor control circuits.
- Battery charging applications.
- Switching power supplies.
- LED drivers and lighting systems.
Package Include:
1x 40T03 N-Channel MOSFET Transistor.
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