5N60 N-CHANNEL POWER MOSFET 2.6A 600V
The 5N60 is a high-voltage N-channel power MOSFET designed for high-speed switching applications. It utilizes advanced planar stripe and DMOS technology to provide excellent switching performance, low on-state resistance, and high avalanche energy. This MOSFET is a robust and reliable component suitable for a wide range of power applications. It is available in a TO-220F package.
Features
- High Voltage Capability
- Low On-Resistance (RDS(on))
- Fast Switching Speed
- Avalanche Ruggedness
- Logic Level Gate Drive
- Rugged Gate Oxide Technology
Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V |
| Continuous Drain Current (TC=25°C) | ID | 2.6 | A |
| Continuous Drain Current (TC=100°C) | ID | 1.65 | A |
| Pulsed Drain Current | IDM | 10 | A |
| Gate-Source Voltage | VGS | ±30 | V |
| Static Drain-Source On-Resistance (@ VGS=10V, ID=1.3A) |
RDS(on) | 2.2 (Max) | Ω |
| Single Pulsed Avalanche Energy | EAS | 331 | mJ |
| Total Power Dissipation (TC=25°C) | PD | 37 | W |
| Operating Junction Temperature | TJ | -55 to +150 | °C |
| Package Type | – | TO-220F | – |
Applications
- Switch Mode Power Supplies (SMPS)
- Motor Control
- DC-DC Converters
- Lighting Applications
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