5N60 2.6A 600V N-CHANNEL POWER MOSFET

• VDSS = 600 V
• RDS(on)= 2.2Ω
• ID= 2.6 A

Features :

• Logic Level Gate Drive
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• Lower Leakage Current : 25 μA (Max.) @ VDS = 600V
• Lower RDS(ON) : 1.81Ω (Typ.)

Datasheet