Power Beyond Limits: MBQ60T65PES IGBT Transistor
The MBQ60T65PES is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient switching and minimal conduction losses. Manufactured by MagnaChip using their advanced Field Stop Trench IGBT 2nd Generation Technology, this device offers superior ruggedness and quality. It is particularly suited for use in solar inverters, uninterruptible power supplies (UPS), induction heating systems, welding machines, and power factor correction (PFC) circuits.
Features:
- High-speed switching with low power loss
- Collector-Emitter saturation voltage: 1.85 V (typical) at 60 A
- Turn-off energy: 0.53 mJ at 25°C
- Reverse recovery time: 110 ns (typical)
- Maximum junction temperature: 175°C
- Halogen-free and RoHS compliant
Specifications :
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Breakdown Voltage | 650 | V |
| Collector-Emitter Saturation Voltage | 1.85 (Typ) / 2.4 (Max) | V |
| Diode Forward Voltage | 1.45 (Typ) / 2.0 (Max) | V |
| Gate-Emitter Threshold Voltage | 4.0 (Min) / 5.0 (Typ) / 6.0 (Max) | V |
| Collector Leakage Current | 40 (Max) | μA |
| Gate Leakage Current | ±100 (Max) | nA |
| Total Gate Charge | 95 (Typ) | nC |
| Input Capacitance | 2327 (Typ) | pF |
| Turn-on Delay Time | 42 (Typ) | ns |
| Rise Time | 54 (Typ) | ns |
| Turn-off Delay Time | 142 (Typ) | ns |
| Fall Time | 40 (Typ) | ns |
| Turn-on Switching Energy | 0.92 (Typ) | mJ |
| Turn-off Switching Energy | 0.53 (Typ) | mJ |
| Reverse Recovery Time | 110 (Typ) | ns |
Applications:
- Power Factor Correction (PFC) circuits.
- Uninterruptible Power Supplies (UPS).
- Photovoltaic (PV) inverters.
- Welding equipment.
- Induction Heating (IH) cookers.
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