Features:
- Fast Read Access Time – 150 ns
- Fast Byte Write – 200 ms or 1 ms
- Self-Timed Byte Write Cycle
- Internal Address and Data Latches
- Internal Control Timer
- Automatic Clear Before Write
- Direct Microprocessor Control
- DATA POLLING
- Low Power
- 30mA Active Current
- 100mA CMOS Standby Current
- High Reliability
- Endurance: 104 or 105 Cycles
- Data Retention: 10 Years
- 5V ± 10% Supply
- CMOS & TTL Compatible Inputs and Outputs
- JEDEC Approved Byte Wide Pinout
- Commercial and Industrial Temperature Ranges
Technical Specifications
| Physical | |
| Case/Package | DIP |
| Mount | Through Hole |
| Number of Pins | 24 |
| Technical | |
| Access Time | 150 ns |
| Density | 16 kb |
| Frequency | 150 GHz |
| Interface | Parallel |
| Max Operating Temperature | 70 °C |
| Max Supply Voltage | 5.5 V |
| Memory Size | 2 kB |
| Memory Type | EEPROM |
| Min Operating Temperature | 0 °C |
| Min Supply Voltage | 4.5 V |
| Nominal Supply Current | 30 mA |
| Operating Supply Voltage | 5 V |
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