BC635 NPN High Current Transistor 45V 1A TO-92
The BC635 is an NPN high-current transistor designed for general-purpose switching and amplification applications. It is a part of the BC635/637/639 family and is widely used in electronic circuits due to its reliability and ease of integration. The transistor is built with an epitaxial silicon structure, offering excellent performance for both low- and high-power applications. It can handle a collector-emitter voltage of 45V and a maximum collector current of 1A, making it suitable for a variety of industrial and consumer electronics.
The BC635 is available in the TO-92 package, a small, robust, and cost-effective form factor that is ideal for through-hole mounting. This transistor operates efficiently at room temperature with a high current gain, ensuring reliable operation in amplifying circuits. It’s especially suitable for applications involving signal amplification, switching, and general control functions in systems that require a transistor with high reliability under varying electrical conditions.
With a power dissipation of 1W and a junction temperature of up to 150°C, the BC635 ensures that heat management is handled effectively. This makes it a good choice for designs that involve moderate power handling without compromising on performance or efficiency. Overall, it is a versatile, dependable choice for a variety of low- and medium-power applications.
Features:
- High collector-emitter voltage: 45V
- Maximum collector current: 1A
- High DC current gain
- TO-92 package for through-hole mounting
- 1W power dissipation capability
- Low saturation voltage and good switching performance
- Suitable for general-purpose switching and amplification
Specifications:
| Product Attribute | Attribute Value |
| Product Category: | Bipolar Transistors – BJT |
| Mounting Style: | Through Hole |
| Package/Case: | TO-92-3 |
| Transistor Polarity: | NPN |
| Configuration: | Single |
| Collector-Emitter Voltage VCEO Max: | 45 V |
| Collector- Base Voltage VCBO: | 45 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Maximum DC Collector Current: | 1 A |
| Pd – Power Dissipation: | 1 W |
| Gain Bandwidth Product fT: | 100 MHz |
| Minimum Operating Temperature: | – 65 C |
| Maximum Operating Temperature: | + 150 C |
| Continuous Collector Current: | 1 A |
| DC Collector/Base Gain hFE Min: | 40 |
| DC Current Gain hFE Max: | 250 |
| Product Type: | BJTs – Bipolar Transistors |
Applications:
- General-purpose switching circuits.
- Amplification circuits.
- Audio and video equipment.
- Power supply regulation.
- Signal processing circuits.
- Motor control applications.
Package includes:
- 1x BC635 NPN High Current Transistor 45V 1A TO-92
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