Manufacturer | FOSAN |
Mfr. Part # | BC856B |
Package | SOT-23(TO-236) |
Datasheet | FOSAN BC856B |
Description | 65V 225mW 290@2mA,5V 100mA PNP SOT-23(TO-236) Bipolar Transistors – BJT ROHS |
Specifications
Attribute | Value |
Category | Triode/MOS Tube/Transistor/Bipolar Transistors – BJT |
Datasheet | FOSAN BC856B |
RoHS | |
Collector Cut-Off Current (Icbo) | 15nA |
Collector-Emitter Breakdown Voltage (Vceo) | 65V |
Power Dissipation (Pd) | 225mW |
DC Current Gain (hFE@Ic, Vce) | 290@2mA,5V |
Collector Current (Ic) | 100mA |
Transition Frequency (fT) | 100MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA,500uA |
Transistor Type | PNP |
Operating Temperature | -55℃~+150℃@(Tj) |
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