BD243C 100V 65W 6A NPN Bipolar Transistor TO-220

BD243C 100V 65W 6A NPN Bipolar Transistor TO-220

The BD243C is a silicon NPN power transistor in a TO‑220 package, engineered for general‑purpose amplifier and switching applications. Its rugged plastic housing and metal tab enable easy mounting to heatsinks, while ensuring reliable thermal performance under load. Operating up to 100 V between collector and emitter, the BD243C handles continuous currents to 6 A and dissipates up to 65 W at a case temperature of 25 °C.

Internally, the device boasts a high current‑gain bandwidth product, delivering substantial gain even at high frequencies. Its complementary PNP counterpart is the BD244C, allowing push–pull or complementary symmetry amplifier designs. The transistor is fully lead‑free and RoHS‑compliant, reflecting modern environmental standards without sacrificing electrical performance.

Thermal resistance from junction to case is a low 1.92 °C/W, facilitating efficient heat removal when mounted properly. A built‑in guard ring enhances ruggedness against secondary breakdown, making the BD243C suitable for demanding pulse and DC loads. Whether used in power regulators, motor drivers, or audio amplifiers, this TO‑220 transistor provides a robust, dependable solution for medium‑power electronic designs.

Features:

• NPN silicon plastic power transistor in TO‑220 package.
• Collector–Emitter voltage 100 V (V_CEO).
• Continuous collector current up to 6 A, peak to 10 A.
• Power dissipation 65 W (case 25 °C).
• High current‑gain bandwidth product.
• Pb‑Free, RoHS‑compliant construction.

Specifications:

Applications:

• General‑purpose amplifier stages.
• Power switching circuits.
• Motor control drivers.
• Audio power amplifiers.

Package Contents:

• 1x BD243C 100V 65W 6A NPN Bipolar Transistor TO-220

Datasheet