BD250C 45V 125W PNP TO-3PN Bipolar Transistor BJT

BD250C PNP Bipolar Transistor for High Power Switching

Features:

• High Collector Current: Capable of handling up to 25 A of continuous collector current, suitable for demanding power applications.

• Power Dissipation: Designed to dissipate up to 125 W at a case temperature of 25°C, ensuring reliable operation under substantial power loads.

• Package Type: Housed in a TO-3PN package, the BD250C offers robust thermal performance and ease of mounting.

Specifications:

• Type Designator: BD250C
• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 125 W
• Maximum Collector-Emitter Voltage |Vcer| ((RBE= 100Ω): 115 V
• Maximum Collector-Emitter Voltage |Vceo|: 100 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Collector-Emitter Breakdown Voltage (Vceo): 45V
• Collector Current-Continuous |Ic max|: 25A
• Maximum Collector Current |Ic max|: 40 A
• Max. Operating Junction Temperature (Tj): 150 °C

Applications:

• Power Amplifiers: Ideal for use in audio and RF power amplification circuits where high current handling is essential.

• Switching Regulators: Suitable for power regulation applications requiring efficient switching and high current capacity.

• Motor Drivers: Effective in driving motors in industrial and automotive applications due to its high current capability.

Document:

BD250C Datasheet