BD648 PNP Power Transistor
The BD648 is a high-performance PNP Silicon Power Darlington Transistor designed for a wide range of high-power applications. Encased in a durable TO-220 package, this transistor is engineered to handle significant current and power dissipation, making it an excellent choice for use in audio amplifiers, general-purpose amplifiers, and analogue switching circuits. Its robust design ensures reliable operation in both consumer and industrial electronics, catering to engineers and hobbyists alike.
Features:
- PNP Silicon Power Darlington Transistor.
- High current gain: minimum hFE of 750 at 3V, 3A.
- Continuous collector current: 8A.
- Collector-emitter voltage: 80V.
- Power dissipation: 62.5W at 25°C case temperature.
- TO-220 package for easy mounting and heat dissipation.
- Complementary Pair Complementary to the NPN transistor BD647.
Specifications:
|
Parameter |
Value |
|---|---|
|
Collector-Emitter Voltage (V_CEO) |
80V |
|
Collector-Base Voltage (V_CBO) |
100V |
|
Emitter-Base Voltage (V_EBO) |
5V |
|
Continuous Collector Current (I_C) |
8A |
|
Peak Collector Current (I_CM) |
12A |
|
Continuous Base Current (I_B) |
0.3A |
|
Power Dissipation (P_tot) |
62.5W |
|
DC Current Gain (h_FE) |
750 min |
|
Transition Frequency (f_T) |
1MHz |
|
Operating Temperature Range |
65 to +150°C |
|
Package |
TO-220 |
Pin Configuration:

Applications:
- Output stages in audio equipment.
- General-purpose amplifiers.
- Analogue switching applications.
- Motor drivers.
- Relay drivers.
Package Include:
- 1x BD648 PNP Power Transistor.


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