BD650 PNP Transistor 100V 8A

BD650 PNP Transistor 100V 8A

The BD650 PNP Transistor is a high-performance silicon Darlington transistor engineered for demanding electronic applications requiring robust power handling. With a maximum collector-emitter voltage of 100V and a continuous collector current of 8A, this transistor is capable of managing significant power loads, up to 62.5W at a case temperature of 25°C. Its Darlington configuration provides a high DC current gain of 750, enabling efficient load driving with minimal base current, which is particularly advantageous in applications where power efficiency is critical.

Housed in a TO-220 package, the BD650 is designed for straightforward integration into various circuit designs. The package’s through-hole mounting facilitates easy installation on printed circuit boards (PCBs) or heat sinks, ensuring effective thermal management during operation.

Features:

• High Voltage Capacity Can handle up to 100V across collector-emitter.
• Strong Current Handling Supports up to 8A of continuous collector current.
• High Gain Provides excellent amplification with a current gain of up to 750.
• Low Saturation Voltage Ensures efficient performance with minimal voltage loss (V_CEsat = 2.0V at 3A).
• Complementary Transistor Pair Pairs with the NPN transistor BD649 for balanced operation in circuits.

Specifications:

• Type: PNP
• Collector-Emitter Voltage, max: 100V
• Collector-Base Voltage, max: 120V
• Emitter-Base Voltage, max: 5V
• Collector Current − Continuous, max: 8A
• Collector Dissipation: 62.5W
• DC Current Gain (h_fe): 750
• Operating and Storage Junction Temperature Range: 65 to +150 °C
• Package: TO-220

Pin Configuration:

Applications:

• Audio power amplifiers, particularly in output stages.
• General-purpose switching circuits.
• Motor control and driver circuits.
• Power supply regulation and control.

Data sheet:

BD650