Description
The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear, and switching applications.
Features
- The low collector-emitter saturation voltage
- Complementary NPN – PNP transistors
Applications
- General purpose
- Audio Amplifier
Specifications
| Product Attribute | Attribute Value |
| Product Category: | Bipolar Transistors – BJT |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Polarity: | NPN |
| Configuration: | Single |
| Collector-Emitter Voltage VCEO Max: | 60 V |
| Collector- Base Voltage VCBO: | 100 V |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| Maximum DC Collector Current: | 15 A |
| Pd – Power Dissipation: | 90 W |
| Maximum Operating Temperature: | + 150 C |
| Continuous Collector Current: | 15 A |
| DC Collector/Base Gain hfe Min: | 20 |
| DC Current Gain hFE Max: | 70 |
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