BU2527AX NPN Power Transistor 1500V 12A 45W

High-speed NPN power transistor. Designed for reliable horizontal deflection circuits in high-resolution monitors. High switching speed.

20.00 EGP

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SKU:3496300129478
BU2527AX NPN Power Transistor 1500V 12A 45W

The BU2527AX is a high-voltage, high-speed switching NPN power transistor encapsulated in a TO-3P(H)IS plastic package. This silicon diffused power transistor is specifically designed for demanding applications, particularly in the horizontal deflection circuits of high-resolution CRT monitors. Its robust design and improved RBSOA (Reverse Bias Safe Operating Area) performance make it a reliable choice for operations up to 64 kHz.

Features
  • High Collector-Emitter Sustaining Voltage: With a VCEO(SUS) of 800V minimum, it can handle high voltage requirements.
  • High Switching Speed: Optimized for fast switching, crucial for horizontal deflection circuits.
  • High Reliability: Offers minimal variation between batches, ensuring consistent and dependable performance.
  • Fully Isolated Package: The TO-3P(H)IS package provides electrical isolation.
Specifications
Parameter Symbol Value Unit
Collector-Emitter Voltage (VBE=0) VCES 1500 V
Collector-Emitter Voltage VCEO 800 V
Emitter-Base Voltage VEBO 7.5 V
Collector Current (Continuous) IC 12 A
Collector Current (Peak) ICM 30 A
Base Current (Continuous) IB 8 A
Base Current (Peak) IBM 12 A
Collector Power Dissipation (Tc=25°C) PC 45 W
Junction Temperature TJ 150 °C
Storage Temperature Range Tstg -55 to 150 °C
Thermal Resistance, Junction to Case Rth j-c 2.8 °C/W
Electrical Characteristics (Tc=25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=100mA, IB=0, L=25mH 800 V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 7.5 V
Collector-Emitter Saturation Voltage VCE(sat) IC=6A, IB=1.2A 5.0 V
Base-Emitter Saturation Voltage VBE(sat) IC=6A, IB=1.2A 1.3 V
Collector Cutoff Current ICES VCE=1500V, VBE=0 0.25 mA
Collector Cutoff Current (TC=125°C) ICES VCE=1500V, VBE=0 2.0 mA
Emitter Cutoff Current IEBO VEB=7.5V, IC=0 0.25 mA
DC Current Gain hFE-1 IC=1A, VCE=5V 6 21
DC Current Gain hFE-2 IC=6A, VCE=5V 5 9
Output Capacitance Cob IE=0, VCB=10V, ftest=1MHz 145 pF
Storage Time tstg Ic=6A, IB(end)=0.55A; LB=0.6µH, -VBB=2V; (-dIB/dt=3.33A/µs) 2.0 µs
Fall Time tf 0.2 µs
Applications
  • The primary application for the BU2527AX is in the horizontal deflection circuits of high-resolution monitors and Cathode Ray Tube (CRT) displays.

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