BUV47 NPN Bipolar Power Transistor
The BUV47 is a high-performance Silicon NPN Power Transistor. It features a robust Collector-Emitter Sustaining Voltage of 400V and a low Collector-Emitter Saturation Voltage of 1.5V (Max.) at 6A. With high-speed switching capabilities and minimal lot-to-lot variations, this transistor ensures reliable operation and consistent performance, making it an ideal choice for various power applications.
Features
- Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V
- Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V (Max.) @ IC = 6A
- High Speed Switching
- Minimum Lot-to-Lot Variations for robust device performance and reliable operation
Specifications
Absolute Maximum Ratings (Tj=25°C)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage | 850 | V |
| VCEO | Collector-Emitter Voltage | 400 | V |
| VEBO | Emitter-Base Voltage | 7 | V |
| IC | Collector Current-Continuous | 9 | A |
| ICM | Collector Current-Peak | 15 | A |
| IB | Base Current-Continuous | 8 | A |
| IBM | Base Current-Peak | 10 | A |
| PC | Collector Power Dissipation @ TC=25°C | 100 | W |
| Tj | Junction Temperature | 150 | °C |
| Tstg | Storage Temperature Range | -65~150 | °C |
Electrical Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 50mA; IB= 0 | 400 | – | – | V |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 50mA; IC= 0 | 7 | – | – | V |
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 6A; IB= 1.2A | – | – | 1.5 | V |
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 9A; IB= 3A | – | – | 3.0 | V |
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A; IB= 1.2A | – | – | 1.6 | V |
| ICBO | Collector Cutoff Current | VCE= 850V; IB= 0 | – | – | 0.15 | mA |
| IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | – | – | 1.0 | mA |
Applications
- Designed for 220V switchmode power supply
- DC and AC motor control applications
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