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Home›Electronic Components (Through-hole)›Transistors›MOSFET Transistors›FDA70N20 MOSFET Transistor 70A 200V TO-3PN
FDA70N20 MOSFET Transistor 70A 200V TO-3PN
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FDA70N20 MOSFET Transistor 70A 200V TO-3PN

FDA70N20: 200V, 70A N-Channel UniFET™ MOSFET. Low on-resistance (35mΩ) and gate charge for high-efficiency power converters, UPS, and PFC applications.

75.00 EGP

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Availability: In Stock
SKU:3496300134724
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FDA70N20 MOSFET Transistor 70A 200V TO-3PN

The FDA70N20 is part of the UniFET™ MOSFET high-voltage family, utilizing advanced planar stripe and DMOS technology. This MOSFET is specifically engineered to minimize on-state resistance while delivering enhanced switching performance and superior avalanche energy strength. It is an ideal choice for high-efficiency switching power converter applications.

✅Features
  • Low On-Resistance
  • Low Gate Charge
  • Low Reverse Transfer Capacitance
  • Reliability
  • High Power Handling
📜📚Specifications
Absolute Maximum Ratings (TC = 25°C)
Symbol Parameter Value Unit
VDSS Drain-Source Voltage 200 V
ID Continuous Drain Current (TC = 25°C) 70 A
ID Continuous Drain Current (TC = 100°C) 45 A
IDM Pulsed Drain Current (Note 1) 280 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1742 mJ
IAR Avalanche Current (Note 1) 70 A
EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 417 W
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Thermal Characteristics
Symbol Parameter Max. Unit
RθJC Thermal Resistance, Junction-to-Case 0.3 °C/W
RθCS Thermal Resistance, Case-to-Sink (Typ.) 0.24 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 40 °C/W
Electrical Characteristics (TC = 25°C)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 200 – – V
IDSS Zero Gate Voltage Drain Current VDS=200V, VGS=0V – – 1 μA
On Characteristics
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 3.0 – 5.0 V
RDS(on) Static Drain-Source On-Resistance VGS=10V, ID=35A – 0.029 0.035 Ω
Dynamic Characteristics
Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz – 3050 3970 pF
Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz – 750 980 pF
Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz – 89 130 pF
Switching Characteristics
Qg Total Gate Charge VDS=160V, ID=70A, VGS=10V – 66 86 nC

💻Applications
  • Power Supplies
  • Power Conversion
  • Display Technology
  • Lighting
🎁Package Content
  • 1 x FDA70N20 MOSFET Transistor 70A 200V TO-3PN
📖DataSheet

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