FGL40N120AND IGBT Power Transistor 1200V 40A TO-264-3
The FGL40N120AND is a 1200 V NPT IGBT in a TO-264 package with an integrated fast recovery diode. Designed for high-power switching applications, it delivers low conduction loss (typ. VCE(sat) = 2.6 V @ 40 A), high input impedance and fast switching characteristics (typical turn-on/turn-off delays in the 10s–100s ns range). Typical uses include induction heating, UPS, AC/DC motor control and general purpose inverters where both ruggedness and switching speed are required.
Features
- 1200 V collector-emitter blocking voltage (NPT technology).
- Low saturation voltage: VCE(sat) ≈ 2.6 V @ IC = 40 A, VGE = 15 V.
- High input impedance (low gate leakage).
- Integrated fast recovery diode (FRD) with typical trr ≈ 75 ns.
- Fast switching: td(on) / td(off) in the tens to low hundreds of ns.
- Robust thermal performance: Pd = 500 W @ TC = 25 °C.
- Short-circuit withstand capability.
Pin Configuration
FGL40N120AND — Technical Tables
Absolute Maximum Ratings
| Parameter | Value / Conditions |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Gate-Emitter Voltage (VGES) | ±25 V |
| Collector Current, continuous (IC) | 64 A @ TC = 25 °C; 40 A @ TC = 100 °C (case referenced) |
| Pulsed Collector Current (ICM) | 160 A (pulse) |
| Diode continuous forward current (IF) | 40 A @ TC = 100 °C |
| Diode peak forward current (IFM) | 240 A (pulse) |
| Maximum Power Dissipation (PD) | 500 W @ TC = 25 °C; (derated at higher TC) |
| Short-circuit withstand time (SCWT) | 10 µs (VCE = 600 V, VGE = 15 V, TC = 125 °C — test condition) |
| Operating junction temperature (TJ) | -55 to +150 °C |
| Storage temperature (TSTG) | -55 to +150 °C |
| Maximum lead temperature for soldering | 300 °C (1/8\” from case, 5 s) |
Off characteristics
| Parameter | Value / Conditions |
|---|---|
| Collector-emitter breakdown voltage (BVCES) | 1200 V (VGE = 0 V, IC = 1 mA) |
| Collector cut-off current (ICES) | ≤ 1 mA (VCE = VCES, VGE = 0) |
| Gate-emitter leakage (IGES) | ≤ ±250 nA (VGE = ±25 V, VCE = 0) |
On characteristics
| Parameter | Value / Conditions |
|---|---|
| Gate threshold voltage (VGE(th)) | typ range ~3.5 – 5.5 – 7.5 V (IC = 250 µA; min-typ-max) |
| Collector-emitter saturation voltage (VCE(sat)) | typ 2.6 V @ IC = 40 A, VGE = 15 V; max ≈ 3.2 V |
| VCE(sat) @ elevated T | typ 2.9 V @ IC = 40 A, TC = 125 °C |
| VCE(sat) @ IC = 64 A | typ ~3.15 V (VGE = 15 V) |
Capacitances
| Parameter | Value / Test conditions |
|---|---|
| Input capacitance (Cies) | ~3200 pF (VCE = 30 V, f = 1 MHz) |
| Output capacitance (Coes) | ~370 pF |
| Reverse transfer capacitance (Cres) | ~125 pF |
Switching (typical values)
| Parameter | Value / Conditions |
|---|---|
| td(on) | typ 15 ns @ 25 °C (VCC = 600 V, IC = 40 A, RG = 5 Ω, VGE = 15 V); ≈ 20 ns @ 125 °C |
| tr (rise time) | typ 20 ns @ 25 °C; ≈ 25 ns @ 125 °C |
| td(off) | typ 110 ns @ 25 °C; ≈ 120 ns @ 125 °C |
| tf (fall time) | typ 40–80 ns (depend on conditions) |
| Eon (turn-on energy) | typ ≈ 2.3 mJ (VCC = 600 V, IC = 40 A) |
| Eoff (turn-off energy) | typ ≈ 1.1 mJ |
| Ets (total switching energy) | typ ≈ 3.4 mJ |
Gate charge
| Parameter | Value / Conditions |
|---|---|
| Total gate charge (Qg) | typ ~220 nC (range 220 – 330 nC) @ VCE = 600 V, IC = 40 A, VGE = 15 V |
| Qge (gate-emitter) | ~25 – 38 nC |
| Qgc (gate-collector) | ~130 – 195 nC |
Diode highlights (integrated FRD)
| Parameter | Value / Conditions |
|---|---|
| Diode forward voltage (VFM) | typ ≈ 3.2 V @ IF = 40 A, TC = 25 °C (max ≈ 4.0 V) |
| Reverse recovery time (trr) | typ ≈ 75 ns @ IF = 40 A, di/dt = 200 A/µs (max ≈ 112 ns) |
| Reverse recovery charge (Qrr) | ~300 – 450 nC (@ 25 °C) |
Applications
- Induction Heating (IH) systems
- Uninterruptible Power Supplies (UPS)
- AC and DC motor drives / motor controllers
- General-purpose inverters and power converters
- High-power switching stages where a 1200 V device is required.
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