FGL60N120AND IGBT Power Transistor 1200V 60A TO-264-3

The FGL60N120AND is a 1200V, 60A IGBT power transistor in a TO-264 package, ideal for high-power applications like motor drives and inverters.

145.00 EGP

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SKU:3496300108718
FGL60N120AND IGBT Power Transistor 1200V 60A TO-264-3

The FGL60N120AND is a robust discrete IGBT designed for demanding power-switching roles. It features a TO‑264‑3 thermally efficient package with a pipe-style collector lead optimized for heat dissipation. Rated for 1200 V blocking voltage and 60 A average collector current, it is engineered to handle high energy pulses with reliability. The device’s sturdy construction and metalized mounting surface enable efficient heat sinking and withstand harsh industrial environments.

Built on Fairchild’s NPT trench-gate technology, this transistor maintains a low saturation voltage, allowing efficient conduction and reducing thermal losses under high-current conditions. It houses a high-quality fast-recovery diode in the same package, ensuring smooth commutation without needing external diodes. The structure’s ruggedness and thermal headroom make it suitable for continuous operation in systems requiring rapid switching cycles, such as motor inverters or welding power supplies

Despite its high-power capability, the FGL60N120AND remains manageable in size. Its three-pin configuration (Gate, Collector, Emitter) offers straightforward PCB or heatsink integration. Marked with clear polarity and equipped with mounting holes, the part simplifies alignment and fixture during assembly. Its thermal pad and reinforced body support secure fastening and ensure long-term mechanical and electrical stability within power converters and industrial switchgear assemblies .

Features:
  • Low saturation voltage : VCE(sat) = 2.0 V @ IC = 60A
  • High input impedance
  • CO-PAK, IGBT with FRD : trr = 81ns (typ.)
Pin Configuration:

Specifications:
Product Attribute Attribute Value
Product Category: IGBTs
Technology: Si
Package/Case: TO-264-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.0 V
Maximum Gate Emitter Voltage: – 20 V, 20 V
Continuous Collector Current at 25 C: 100 A
Pd – Power Dissipation: 367 W
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: FGL60N120AND
Continuous Collector Current Ic Max: 100 A
Applications:
  • Motor Control Inverters.
  • Uninterruptible Power Supplies (UPS).
  • Welding Machines.
  • Switch-Mode Power Supplies (SMPS).
  • Induction Heating Equipment.
  • High-Frequency Power Converters.
  • Electric Vehicle Power Modules.
Package Contents:
  • 1x FGL60N120AND IGBT Power Transistor 1200V 60A TO-264-3
FGL60N120AND Datasheet

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