FQA20N60 N-Channel MOSFET Transistor 600V, 20A TO-3PN
FQA20N60 is a 600V, 20A N-Channel MOSFET in a TO-3PN package, delivering fast switching, low power loss, and reliable performance in power circuits.
45.00 EGP
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The FQA20N60 is an N-Channel enhancement mode power MOSFET designed for high-efficiency and high-power applications. Utilizing UTC’s advanced planar stripe and DMOS technology, it provides low on-state resistance and excellent switching performance. This MOSFET is capable of withstanding high-energy pulses, making it ideal for applications requiring robust operation in avalanche and commutation modes. The device features a drain-source voltage rating of 600V and can handle a continuous drain current of 20A, ensuring reliable performance in demanding power systems.
This transistor is designed to support high-speed switching applications, making it suitable for motor control, uninterruptible power supplies (UPS), DC choppers, and both switched-mode and resonant-mode power supplies. It also offers low gate charge and reverse transfer capacitance, which contributes to the overall efficiency of the system. The MOSFET’s excellent thermal management ensures it can perform effectively even in environments where high temperatures are a concern.
The FQA20N60 is packaged in a TO-3PN or TO-247 form factor, offering convenient integration in various electronic circuits. Its ability to handle high currents while maintaining low thermal resistance makes it a reliable choice for industrial power applications.
Features:
- The 20N60 series is an N-channel enhancement mode power MOSFET using advanced technology to provide customers with planar stripe and DMOS technology.
- This technology is specialized in allowing a minimum on-state resistance and superior switching performance.
- It also can withstand high energy pulse in the avalanche and commutation mode.
- These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Pin Configurations:
Specifications:
| Product Attribute | Attribute Value |
| Datasheet: | FQA20N60 |
| Product Category: | MOSFETs |
| Technology: | Si |
| Series: | 20N60 |
| Model: | FQA20N60 |
| Transistor Type: | N-Channel |
| Number of Channels: | 1 Channel |
| Configuration: | Single |
| Package/Case: | TO-3PN |
| Mounting Type: | Through Hole |
| Number of terminals: | 3 |
| Vds – Drain-Source Breakdown Voltage: | 600 V |
| Id – Continuous Drain Current: | 20 A |
| Rds On – Drain-Source Resistance(Max.): | 0.45 Ω |
| Vgs – Gate-Source Voltage: | – 30 V, + 30 V |
| Pd – Power Dissipation: | 416 W |
| Typical Fall Time: | 170 ns |
| Typical Rise Time: | 130 ns |
| Typical Turn-Off Delay Time: | 800 ns |
| Typical Turn-On Delay Time: | 110 ns |
| Operating Temperature Range: | -55 ℃ to +150 ℃ |
Applications:
- TV power.
- ATX power.
- Industrial power applications.
- UPS.
- Solar Inverter.
- AC-DC Power Supply.
- DC-DC Converters.
- Power Factor Correction (PFC).
- Plasma Display Panels (PDP).
- Server/Telecom power.
- lighting ballasts.
- Motion control.
Package Contents:
- 1x FQA20N60 N-Channel MOSFET Transistor 600V, 20A TO-3PN
Datasheet:
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