Pinout:

Specifications:
- Type Designator: FQA23N50
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Pd – Maximum Power Dissipation: 290 W
- |Vds| – Maximum Drain-Source Voltage: 500 V
- |Vgs| – Maximum Gate-Source Voltage: 30 V
- |Vgs(th)| – Maximum Gate-Threshold Voltage: 5 V
- |Id| – Maximum Drain Current: 23 A
- Tj – Maximum Junction Temperature: 150 °C
- Qg – Total Gate Charge: 90 nC
- Rds – Maximum Drain-Source On-State Resistance: 0.2 Ohm
- Package: TO-3P


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